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Panasonic Electronic Components Datasheet

XN4509 Datasheet

Silicon NPN epitaxial planer transistor

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Composite Transistors
XN4509
Silicon NPN epitaxial planer transistor
For high-frequency amplification
s Features
q Two elements incorporated into one package.
q Reduction of the mounting area and assembly cost by one half.
0.65±0.15
6
5
4
2.8
+0.2
–0.3
1.5
+0.25
–0.05
Unit: mm
0.65±0.15
1
2
3
s Basic Part Number of Element
q 2SC4561 × 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
Ratings
50
50
5
50
200
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
0.1 to 0.3
0.4±0.2
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Emitter (Tr2)
4 : Collector (Tr2)
5 : Base (Tr1)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: AO
Internal Connection
Tr1
6
1
52
43
Tr2
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
IC = 10µA, IE = 0
IC = 1mA, IB = 0
IE = 10µA, IC = 0
VCB = 10V, IE = 0
VCE = 10V, IB = 0
VCE = 10V, IC = 2mA
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
VCB = 10V, IE = 0, f = 1MHz
min
50
50
5
200
typ max Unit
V
V
V
0.1 µA
100 µA
500
0.06 0.3
V
250 MHz
1.5 pF
1


Panasonic Electronic Components Datasheet

XN4509 Datasheet

Silicon NPN epitaxial planer transistor

No Preview Available !

Composite Transistors
PT — Ta
240
200
160
120
80
40
0
0 40 80 120 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=10
30
10
3
1
0.3
0.1 25˚C Ta=75˚C
– 25˚C
0.03
0.01
1 3 10 30 100 300 1000
Collector current IC (mA)
Cob — VCB
6
f=1MHz
IE=0
Ta=25˚C
5
4
3
2
1
0
1 3 10 30 100
Collector to base voltage VCB (V)
IC — VCE
120
Ta=25˚C
100
80 IB=300µA
250µA
60
200µA
40 150µA
100µA
20
50µA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
hFE — IC
600
VCE=10V
500
Ta=75˚C
400
25˚C
– 25˚C
300
200
100
0
0.1 0.3 1 3 10 30 100
Collector current IC (mA)
XN4509
IC — VBE
60
VCE=10V
50 25˚C
Ta=75˚C
– 25˚C
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
fT — IE
600
VCB=10V
Ta=25˚C
500
400
300
200
100
0
0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
2


Part Number XN4509
Description Silicon NPN epitaxial planer transistor
Maker Panasonic Semiconductor
Total Page 2 Pages
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