PE29100 driver equivalent, high-speed fet driver.
* High- and Low-side FET drivers
* Dead-time control
* Fast propagation delay, 8 ns
* Tri-state enable mode
E
* Sub-nanosecond rise and fall time
.
* DC
–DC conversions
* AC
–DC conversions
* Wireless power
* Class D ampli.
The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as
L enhancement mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing
switching transition speeds in the sub-n.
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