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PE2012T Datasheet, MOSFET, ChipSourceTek

PE2012T Datasheet, MOSFET, ChipSourceTek

PE2012T

datasheet Download (Size : 781.30KB)

PE2012T Datasheet
PE2012T

datasheet Download (Size : 781.30KB)

PE2012T Datasheet

PE2012T Features and benefits

PE2012T Features and benefits


* VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram
* High Power and current handing capabilit.

PE2012T Application

PE2012T Application

PE2012T General Features
* VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ.

PE2012T Description

PE2012T Description

The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE2012T General Features
* VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V R.

Image gallery

PE2012T Page 1 PE2012T Page 2 PE2012T Page 3

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TAGS

PE2012T
N-Channel
Enhancement
Mode
Power
MOSFET
ChipSourceTek

Manufacturer


ChipSourceTek

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