PE2012T
Description
The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = 18V, ID = 12A
RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V
Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
技 Application
- Battery Protection k
- Load switch
Marking and pin assignment
源特科urce Te Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
矽 o Drain-Source Voltage
Parameter
S Gate-Source Voltage p Drain Current-Continuous
Pulsed Drain Current (Note 1) i Maximum Power Dissipation Ch Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM PD TJ,TSTG
TSSOP-8
Rating
18 ±12 12 36 1.5 -55 To 150
Unit
V V A A W
℃
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA
℃/W
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