PE2023
PE2023 is P-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
- Part of the PE2023-ChipSourceTek comparator family.
- Part of the PE2023-ChipSourceTek comparator family.
Description
The PE2023 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = -20V, ID = -3.2A
RDS(ON) < 95mΩ @ VGS=-4.5V RDS(ON) < 120mΩ @ VGS=-2.5V
Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
- PWM applications
技
- Load switch k
- Power management
Marking and pin assignment
源特科urce Te Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
矽 o Parameter S Drain-Source Voltage p Gate-Source Voltage
Drain Current-Continuous i Pulsed Drain Current (Note 1) h Maximum Power Dissipation COperating Junction and Storage Temperature Range
Symbol
VDS VGS ID IDM PD TJ,TSTG
SOT-23-6L
Rating
-20 ±12 -3.2 -10
1 -55 To 150
Unit
V V A A W ℃
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA
℃/W
TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://.Chip Source Tek. E-mail: Tony.Wang@Chip Source Tek. In Fo@Chip Source Tek.
2020 Dec. v1.0
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown...