PE2012 - N-Channel Enhancement Mode Power MOSFET
PE2012 Features
* VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package Application
* Battery Protection k
* Load switch Mark