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PE2012, PE2012-ChipSourceTek - N-Channel Enhancement Mode Power MOSFET

PE2012 Description

N-Channel Enhancement Mode Power MOSFET .
The PE2012 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

PE2012 Features

* VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: PE2012, PE2012-ChipSourceTek. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
PE2012, PE2012-ChipSourceTek
Manufacturer
ChipSourceTek
File Size
788.24 KB
Datasheet
PE2012-ChipSourceTek_removed.pdf
Description
N-Channel Enhancement Mode Power MOSFET
Note
This datasheet PDF includes multiple part numbers: PE2012, PE2012-ChipSourceTek.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-Channel Enhancement Mode Power MOSFET ChipSourceTek
ChipSourceTek PE2012-like datasheet