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PE2012T - N-Channel Enhancement Mode Power MOSFET

ChipSourceTek

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Datasheet Details

Part number: PE2012T
Manufacturer: ChipSourceTek
File Size: 781.30 KB
Datasheet: PE2012T-ChipSourceTek.pdf
Description: N-Channel Enhancement Mode Power MOSFET

PE2012T Product details

Description

The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

Features

VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Application.
Battery Protection k.
Load switch Marking and pin assignment urceTe Absolute Maximum Ratings (TA=25℃ unless otherwise noted) o Drain-Source Voltage Parameter S Gate-Source Voltage p Drain Current-Continuous Pulsed Drain Current (Not.

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N-Channel Enhancement Mode Power MOSFET ChipSourceTek

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