PE2012T N-Channel Enhancement Mode Power MOSFET

ChipSourceTek

Description

N-Channel Enhancement Mode Power MOSFET .
The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

📥 Download Datasheet

PE2012T Datasheet Preview — Preview of PE2012T PDF

Datasheet Specifications

Part number: PE2012T
Manufacturer: ChipSourceTek
File Size: 781.30 KB
Datasheet: PE2012T-ChipSourceTek.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

PE2012T Distributors

📁 Related Datasheet

PE2010 - CURRENT SENSOR (YAGEO)
PE2017 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE200GB - THYRISTOR MODULE (SanRex Corporation)
PE2023 - P-Channel Enhancement Mode Power MOSFET (semi one)
PE20N6 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE20S0017 - 4 Way High Power Broadband Combiner (Pasternack)

📌 All Tags

N-Channel Enhancement Mode Power MOSFET ChipSourceTek

ChipSourceTek PE2012T-like datasheet

PE2012

PE2209A

PE2301A

PE2302A

PE2306A