PE2017 N-Channel Enhancement Mode Power MOSFET

semi one

Description

PE2017 N-Channel Enhancement Mode Power MOSFET .
The PE2017 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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PE2017 Datasheet Preview — Preview of PE2017 PDF

Datasheet Specifications

Part number: PE2017
Manufacturer: semi one
File Size: 211.22 KB
Datasheet: PE2017-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =7A RDS(ON) < 24mΩ @ VGS=2.5V RDS(ON) < 17mΩ @ VGS=4.5V ESD Rating: 2500V HBM
* High Power and current handing capability
* Lead free product is acquired

PE2017 Distributors

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PE2017 N-Channel Enhancement Mode Power MOSFET semi one

semi one PE2017-like datasheet