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PE2017 - N-Channel Enhancement Mode Power MOSFET

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semi one

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PE2017 N-Channel Enhancement Mode Power MOSFET by semi one - Datasheet Preview — Datasheet preview – PE2017

Datasheet Details

Part number	PE2017
Manufacturer	semi one
File Size	211.22 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE2017 Datasheet
Additional preview pages of the PE2017 datasheet.

Product details

Description

The PE2017 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID =7A RDS(ON) < 24mΩ @ VGS=2.5V RDS(ON) < 17mΩ @ VGS=4.5V ESD Rating: 2500V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram Marking and pin Assignment.

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Published: Dec 3, 2018 |