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PE2017 - N-Channel Enhancement Mode Power MOSFET

PE2017 Description

PE2017 N-Channel Enhancement Mode Power MOSFET .
The PE2017 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

PE2017 Features

* VDS = 20V,ID =7A RDS(ON) < 24mΩ @ VGS=2.5V RDS(ON) < 17mΩ @ VGS=4.5V ESD Rating: 2500V HBM
* High Power and current handing capability
* Lead free product is acquired

📥 Download Datasheet

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Datasheet Details

Part number
PE2017
Manufacturer
semi one
File Size
211.22 KB
Datasheet
PE2017-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET semi one
semi one PE2017-like datasheet