PE2301 Datasheet PDF - semi one P-Channel Enhancement Mode Power MOSFET Specs

PE2301 - P-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The PE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V D G S Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Marking and pin Assignment.

Datasheet Details

Part number	PE2301
Manufacturer	semi one
File Size	196.61 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	PE2301 Datasheet
Additional preview pages of the PE2301 datasheet.

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Full PDF Text Transcription

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PE2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.

Published: Dec 3, 2018 |