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PE2301 - P-Channel Enhancement Mode Power MOSFET

PE2301 Description

PE2301 P-Channel Enhancement Mode Power MOSFET .
The PE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

PE2301 Features

* VDS = -20V,ID = -3A RDS(ON) = 110mΩ @ VGS=-2.5V RDS(ON) = 85 m Ω @ VGS=-4.5V D G S Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

📥 Download Datasheet

Preview of PE2301 PDF
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Datasheet Details

Part number
PE2301
Manufacturer
semi one
File Size
196.61 KB
Datasheet
PE2301-semione.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET semi one
semi one PE2301-like datasheet