PE2302A Datasheet, Mosfet, semi one

PE2302A Features

• Mosfet
• VDS = 20V,ID = 3A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V
• High Power and current handing capability
• Lead free product is acquired
• Sur

PDF File Details

Part number:

PE2302A

Manufacturer:

semi one

File Size:

184.58kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as

TAGS

PE2302A

semi one

📁 Related Datasheet

PE2302 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge .

PE2302A - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
N-Channel Enhancement Mode Power MOSFET Description The PE2302A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c.

PE2300 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE2300 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge .

PE2301 - P-Channel Enhancement Mode Power MOSFET (semi one)
PE2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

PE2301A - P-Channel Enhancement Mode Power MOSFET (semi one)
PE2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge.

PE2301A - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE2301A P-Channel Enhancement Mode Power MOSFET Description The PE2301A uses advanced trench technology to provide excellent RDS(ON) and low gate cha.

PE2304A - N-Channel Enhancement Mode Power MOSFET (semi one)
PE2304A N-Channel Enhancement Mode Power MOSFET Description The PE2304A uses advanced trench technology to provide excellent RDS(ON) and low gate ch.

PE2305 - P-Channel Enhancement Mode Power MOSFET (semi one)
P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera.

PE2305A - P-Channel Enhancement Mode Power MOSFET (semi one)
P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2305A uses advanced trench technology to provide excellent RDS(ON), low gate charge and oper.

PE2306A - Enhancement Mode Power MOSFET (ChipSourceTek)
N-Channel Enhancement Mode Power MOSFET PE2306A Description D The PE2306A uses advanced trench technology to provide excellent RDS(ON), low gate .