PE2012 Datasheet, Mosfet, semi one

PE2012 Features

• Mosfet
• VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V
• High power and current handing capability
• Lead free product is acquired
• Sur

PDF File Details

Part number:

PE2012

Manufacturer:

semi one

File Size:

574.74kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1

PE2012 Application

• Applications . General Features
• VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V
• High power and current han

TAGS

PE2012

semi one

📁 Related Datasheet

PE2010 - CURRENT SENSOR (YAGEO)
DATA SHEET CURRENT SENSOR - LOW TCR PE series 5%, 1% sizes 0603/0805/1206/2010/2512/4527 RoHS pliant & Halogen free Product specification – August.

PE2012 - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
N-Channel Enhancement Mode Power MOSFET Description The PE2012 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It ca.

PE2012T - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
N-Channel Enhancement Mode Power MOSFET Description The PE2012T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c.

PE2017 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE2017 N-Channel Enhancement Mode Power MOSFET Description The PE2017 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

PE200GB - THYRISTOR MODULE (SanRex Corporation)
.. THYRISTOR MODULE PK(PD,PE)200GB UL;E76102 M Power Thyristor/Diode Module PK200GB series are designed for various rectifier circu.

PE2023 - P-Channel Enhancement Mode Power MOSFET (semi one)
PE2023 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE2023 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

PE2023 - P-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
PE2023 P-Channel Enhancement Mode Power MOSFET Description The PE2023 uses advanced trench technology to provide excellent RDS(ON) and low gate charg.

PE20N6 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE20N6 N-Channel Enhancement Mode Power MOSFET Description The PE20N6 uses advanced trench technology and design to provide excellent RDS(ON) with lo.

PE20S0017 - 4 Way High Power Broadband Combiner (Pasternack)
4 Way High Power Broadband Combiner From 2 GHz to 6 GHz Rated at 400 Watts, Type N TECHNICAL DATA SHEET PE20S0017 PE20S0017 is a passive 4 way High.

PE21101-3-3SD - MACHINE SCREW (Military-Fasteners)
Military-Fasteners. PE21101-3-3SD MACHINE SCREW SPEC Description: PE21101-3-3SD Machine Screw PE21101-3-3SD Manufacturer certs (CofC) are provide.