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PE2012 - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PE2012
Manufacturer	semi one
File Size	574.74 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE2012-semione.pdf

PE2012 Product details

Description

The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

Features

VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment.

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Published: Dec 3, 2018 |