PE2012 N-Channel Enhancement Mode Power MOSFET

Description

PE2012 N-Channel Enhancement Mode Power MOSFET .
The PE2012 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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PE2012 Datasheet Preview — Preview of PE2012 PDF

Datasheet Specifications

Part number: PE2012
Manufacturer: semi one
File Size: 574.74 KB
Datasheet: PE2012-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =12A RDS(ON) < 13mΩ @ VGS=4.5V RDS(ON) < 15mΩ @ VGS=2.5V
* High power and current handing capability
* Lead free product is acquired

PE2012 Distributors

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PE2012 N-Channel Enhancement Mode Power MOSFET semi one

semi one PE2012-like datasheet