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PE2012 Datasheet, MOSFET, ChipSourceTek

PE2012 Datasheet, MOSFET, ChipSourceTek

PE2012

datasheet Download (Size : 788.24KB)

PE2012 Datasheet
PE2012

datasheet Download (Size : 788.24KB)

PE2012 Datasheet

PE2012 Features and benefits

PE2012 Features and benefits


* VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ @ VGS=2.5V Schematic diagram
* High Power and current handing capabilit.

PE2012 Application

PE2012 Application

PE2012 General Features
* VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS(ON) < 13mΩ .

PE2012 Description

PE2012 Description

The PE2012 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE2012 General Features
* VDS = 18V, ID = 12A RDS(ON) < 11mΩ @ VGS=4.5V RDS(ON) < 12mΩ @ VGS=3.8V RDS.

Image gallery

PE2012 Page 1 PE2012 Page 2 PE2012 Page 3

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TAGS

PE2012
N-Channel
Enhancement
Mode
Power
MOSFET
ChipSourceTek

Manufacturer


ChipSourceTek

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