900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






pSemi

PE29102 Datasheet Preview

PE29102 Datasheet

High-speed FET Driver

No Preview Available !

PE29102
Document Category: Product Specification
UltraCMOS® High-speed FET Driver, 40 MHz
Features
• High- and low-side FET drivers
• Dead-time control
• Fast propagation delay, 9 ns
• Tri-state enable mode
• Sub-nanosecond rise and fall time
• 2A/4A peak source/sink current
• Package – flip chip
Applications
• Class D audio
• DC–DCconversions
• AC–DC conversions
• Wireless charging
• Envelope tracking
• LiDAR
Figure 1 • PE29102 Functional Diagram
Product Description
The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such
as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing
switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29102
is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth.
High switching speeds result in smaller peripheral components and enable innovative designs for applications
such as class D audio and wireless charging. The PE29102 is available in a flip chip package.
The PE29102 is manufactured on Peregrine’s UltraCMOS process, a patented advanced form of silicon-on-
insulator (SOI) technology, offering the performance of GaAs with the economy and integration of conventional
CMOS.
©2018, pSemi Corporation. All rights reserved. • Headquarters: 9369 Carroll Park Drive, San Diego, CA, 92121
Product Specification
www.psemi.com
DOC-81227-7 – (11/2018)




pSemi

PE29102 Datasheet Preview

PE29102 Datasheet

High-speed FET Driver

No Preview Available !

PE29102
High-speed FET Driver
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be
restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 • Absolute Maximum Ratings for PE29102
Parameter/Condition
Low-side bias (LSB) to low-side source (LSS)
High-side bias (HSB) to high-side source (HSS)
Input signal
HSS to LSS
HSS to GND
LSS to GND
ESD voltage HBM(*), all pins
Note: * Human body model (JEDEC JS–001, Table 2A).
Min
–0.3
–0.3
–0.3
–100
-1
-1
Max
7
7
7
100
100
100
500
Unit
V
V
V
V
V
V
V
Page 2 of 16
www.psemi.com
DOC-81227-7 – (11/2018)


Part Number PE29102
Description High-speed FET Driver
Maker pSemi
Total Page 16 Pages
PDF Download

PE29102 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 PE29100 High-speed FET Driver
Peregrine Semiconductor
2 PE29101 High-speed FET Driver
pSemi
3 PE29102 High-speed FET Driver
pSemi





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy