PE42445 (pSemi)
High Isolation UltraCMOS SP4T RF Switch
PE42445
Document Category: Product Specification
High Isolation UltraCMOS® SP4T RF Switch, 10 MHz–8.5 GHz
Features
• Operating frequency: Up to 8.5 G
(50 views)
PE43610 (pSemi)
RF Digital Step Attenuator
PE43610
Document Category: Product Specification
UltraCMOS® RF Digital Step Attenuator, 9 kHz–13 GHz
Features
• Wideband support from 9 kHz to 13 GHz
(40 views)
PE29102 (pSemi)
High-speed FET Driver
PE29102
Document Category: Product Specification
UltraCMOS® High-speed FET Driver, 40 MHz
Features
• High- and low-side FET drivers • Dead-time contr
(39 views)
PE42482 (pSemi)
SP8T RF Switch
PE42482
Document Category: Product Specification
UltraCMOS® SP8T RF Switch, 10 MHz–8 GHz
Features
• High isolation: 41 dB @ 6 GHz • Low insertion los
(33 views)
PE42726 (pSemi)
SPDT RF Switch
PE42726
Document Category: Product Specification
UltraCMOS® SPDT RF Switch, 5–1794 MHz
Features
Figure 1 • PE42726 Functional Diagram
• Supports DO
(32 views)
UP6206 (UniverChipSemi)
300mA Low Power CMOS LDO
UP6206
300mA Low Power CMOS LDO
DESCRIPTION
The UP6206 series are a highly precise, lower consumption, 3 terminals, positive voltage regulators ma
(30 views)
PE42512 (pSemi)
RF Switch
PE42512
Document Category: Product Specification
UltraCMOS® SP12T RF Switch, 9 kHz–8 GHz
Features
• High isolation: 39 dB @ 6 GHz • Low insertion los
(29 views)
PE29101 (pSemi)
High-speed FET Driver
PE29101
Document Category: Product Specification
UltraCMOS® High-speed FET Driver, 40 MHz
Features • High- and low-side FET drivers
• Dead-time contr
(28 views)
UP7550-1 (UniverChipSemi)
100mA Low Power CMOS LDO
UP75XX-1
100mA Low Power CMOS LDO
DESCRIPTION
The UP75XX-1 series is a set of three-terminal low power high voltage implemented in CMOS technology
(27 views)
UP7533-1 (UniverChipSemi)
100mA Low Power CMOS LDO
UP75XX-1
100mA Low Power CMOS LDO
DESCRIPTION
The UP75XX-1 series is a set of three-terminal low power high voltage implemented in CMOS technology
(26 views)
CJ3400 (ZPSEMI)
N-Channel Enhancement Mode MOSFET
CJ3400
Feature
30V/5.8A, RDS(ON) = 35mΩ(MAX) @VGS = 10V.
RDS(ON) =40mΩ(MAX) @VGS = 4.5V. RDS(ON) =55mΩ(MAX) @VGS = 2.5V.
Super High dense cell des
(26 views)
CJ2102 (ZPSEMI)
N-Channel 20-V(D-S) MOSFET
CJ2102
SOT-323 Plastic-Encapsulate MOSFETS
CJ2102 N-Channel 20-V(D-S) MOSFET
FEATURE z TrenchFET Power MOSFET
APPLICATIONS z Load Switch for Portab
(25 views)
ACP2766 (Acpsemi)
Boost WLED Driver
ACP2766
TSOT26,Boost WLED Driver with 38V OVP
◤GENERAL DESCRIPTION
The ACP2766 is a step-up DC-DC converter which operating as current source to driv
(24 views)
CJ3139K (ZPSEMI)
P-Channel MOSFET
CJ3139K
SOT-723 Plastic-Encapsulate MOSFETS
CJ3139K P-Channel MOSFET
SOT-723
FEATURES z Lead Free Product is Acquired z Surface Mount Package z P-
(23 views)
CJ3401 (ZPSEMI)
P-Channel Enhancement Mode MOSFET
CJ3401
Feature
-30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V.
RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V.
Super High dense ce
(23 views)
UP1117B (UniverChipSemi)
1A Bipolar Linear Regulator
UP1117B
DESCRIPTION
The UP1117B series is a set of low dropout three-terminal with a dropout of 1.3V at 1A load current UP1117B features a very low
(22 views)
UM4800 (UniverChipSemi)
Dual N-Channel Enhancement Mode MOSFET
UM4800
30V Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The UM4800 is the N-Channel logic enhancement mode power field effect transistor is
(22 views)
UP6202 (UniverChipSemi)
150mA Low Power CMOS LDO
UP6202
150mA Low Power CMOS LDO
DESCRIPTION
The UP6202 series are a highly precise, lower consumption, 3 terminals, positive voltage regulators ma
(22 views)
TSM200 (SPSEMI)
Surface Mount Devices
PPTC/TSM Series
Features Surface Mount Devices Lead free deivce Size 5045mm/2018 mils Surface Mount packaging for automated assembly Agency recogniti
(22 views)
BP6212 (BPSEMI)
150mA High Input Voltage Low Power LDO
BPSEMI
150mA High Input Voltage Low Power LDO
BP6212
Features
z Low power consumption z Low voltage drop z Low temperature coefficient
Applications
(21 views)