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32D Series Varistor Type MYG Type MYG Varistors are made of semiconductor ceramic materials composed mainly of zinc oxide. They have non-linear resist

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CJ78L08 SOT-89-3L Encapsulate Three-terminal Voltage Regulators CJ78L08 Three-terminal positive voltage regulator FEATURES Maximum Output current IO

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PPTC/TSM Series Features Surface Mount Devices Lead free deivce Size 5045mm/2018 mils Surface Mount packaging for automated assembly Agency recogniti

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PE42445 Document Category: Product Specification High Isolation UltraCMOS® SP4T RF Switch, 10 MHz–8.5 GHz Features • Operating frequency: Up to 8.5 G

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32D Series Varistor Type MYG Type MYG Varistors are made of semiconductor ceramic materials composed mainly of zinc oxide. They have non-linear resist

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32D Series Varistor Type MYG Type MYG Varistors are made of semiconductor ceramic materials composed mainly of zinc oxide. They have non-linear resist

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32D Series Varistor Type MYG Type MYG Varistors are made of semiconductor ceramic materials composed mainly of zinc oxide. They have non-linear resist

(3 views)

32D Series Varistor Type MYG Type MYG Varistors are made of semiconductor ceramic materials composed mainly of zinc oxide. They have non-linear resist

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32D Series Varistor Type MYG Type MYG Varistors are made of semiconductor ceramic materials composed mainly of zinc oxide. They have non-linear resist

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-2516Plastic-Encapsulate MOSFETS CJD04N60 600V N-Channel Power MOSFET V(BR)DSS 600V RDS(on)M

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CJ3401 Feature  -30V/-4.2A, RDS(ON) =55mΩ(MAX) @VGS = -10V. RDS(ON) = 70mΩ(MAX) @VGS = -4.5V. RDS(ON) =120mΩ(MAX) @VGS = -2.5V.  Super High dense ce

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PE43610 Document Category: Product Specification UltraCMOS® RF Digital Step Attenuator, 9 kHz–13 GHz Features • Wideband support from 9 kHz to 13 GHz

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PE42512 Document Category: Product Specification UltraCMOS® SP12T RF Switch, 9 kHz–8 GHz Features • High isolation: 39 dB @ 6 GHz • Low insertion los

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PE42726 Document Category: Product Specification UltraCMOS® SPDT RF Switch, 5–1794 MHz Features Figure 1 • PE42726 Functional Diagram • Supports DO

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PE42482 Document Category: Product Specification UltraCMOS® SP8T RF Switch, 10 MHz–8 GHz Features • High isolation: 41 dB @ 6 GHz • Low insertion los

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BPSEMI 150mA High Input Voltage Low Power LDO BP6212 Features z Low power consumption z Low voltage drop z Low temperature coefficient Applications

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CJD04N65 TO-251S Plastic-Encapsulate MOSFETS CJD04N65 N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to st

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CJD01N65B TO-251-3L Plastic-Encapsulate MOSFETS CJD01N65B N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to

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UP6206 300mA Low Power CMOS LDO  DESCRIPTION The UP6206 series are a highly precise, lower consumption, 3 terminals, positive voltage regulators ma

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32D Series Varistor Type MYG Type MYG Varistors are made of semiconductor ceramic materials composed mainly of zinc oxide. They have non-linear resist

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