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Peregrine Semiconductor

PE423641 Datasheet Preview

PE423641 Datasheet

SP4T RF Switch

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Product Description
The PE423641 is a HaRP™ technology-enhanced
reflective SP4T RF switch. It has received AEC-Q100
Grade 2 certification and meets the quality and
performance standards that makes it suitable for use in
harsh automotive environments. It is designed to cover a
wide range of wireless applications from 50 MHz through
3 GHz such as cellular antenna band switching,
automotive infotainment and traffic safety applications.
No blocking capacitors are required if DC voltage is not
present on the RF ports.
The PE423641 is manufactured on Peregrine’s
UltraCMOS® process, a patented variation of silicon-on-
insulator (SOI) technology on a sapphire substrate,
offering excellent RF performance.
Peregrine’s HaRP™ technology enhancements deliver
high linearity and excellent harmonics performance. It is
an innovative feature of the UltraCMOS process, offering
the performance of GaAS with the economy and
integration of conventional CMOS.
Figure 1. Functional Diagram
Product Specification
PE423641
UltraCMOS® SP4T RF Switch
50–3000 MHz
Features
 AEC-Q100 Grade 2 certified
 Supports operating temperature up to
+105°C
 HaRPTM technology enhancements
provide excellent linearity
 Low harmonics of 2fo = –83 dBc
and 3fo = –77 dBc @ +35 dBm
 IMD3 of –111 dBm @ WCDMA
band 1
 IIP3 of 68 dBm
 Low insertion loss
 0.50 dB @ 1000 MHz
 0.65 dB @ 2200 MHz
 High isolation
 32 dB @ 1000 MHz
 25 dB @ 2200 MHz
 High ESD performance
 2 kV HBM on all pins
 100V MM on all pins
 1 kV CDM on all pins
 Integrated decoder for 2-pin control
 Accepts 1.8V and 2.75V levels
Figure 2. Package Type
16-lead 3 x 3 mm QFN
71-0094
Document No. DOC-12414-2 www.psemi.com
©2013-2014 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 11




Peregrine Semiconductor

PE423641 Datasheet Preview

PE423641 Datasheet

SP4T RF Switch

No Preview Available !

PE423641
Product Specification
Table 1. Electrical Specifications @ +25°C, VDD = 2.75V (ZS = ZL = 50)
Parameter
Path
Condition
Operational frequency
Insertion loss
(symmetric ports)
RFC–RFX
50–1000 MHz
1000–2200 MHz
2200–2700 MHz
2700–3000 MHz
Isolation
RFC–RFX
50–1000 MHz
1000–2200 MHz
2200–2700 MHz
2700–3000 MHz
Return loss (active ports)
RFC–RFX
50–1000 MHz
1000–2200 MHz
2200–2700 MHz
2700–3000 MHz
50–1000 MHz
Return loss (common ports)
1000–2200 MHz
RFC–RFX
2200–2700 MHz
Min Typ Max Unit
50 3000 MHz
0.50 0.60
dB
0.65 0.75
dB
0.80 0.95
dB
0.95 1.15
dB
30 32
dB
23 25
dB
21 23
dB
20 22
dB
24 dB
19 dB
16 dB
14 dB
23 dB
16 dB
14 dB
2700–3000 MHz
13 dB
2nd harmonic
RFX
+35 dBm output power, 850/900 MHz
+33 dBm output power, 1800/1900 MHz
–83 –80 dBc
–85 –78 dBc
3rd harmonic
RFX
+35 dBm output power, 850/900 MHz
+33 dBm output power, 1800/1900 MHz
IMD3
RF Measured at 2.14 GHz at ANT port, input +20 dBm CW
signal at 1.95 GHz and –15 dBm CW signal at 1.76 GHz
Input IP2
RFC–RFX 50–3000 MHz
Input IP3
RFC–RFX 50–3000 MHz
Input 0.1 dB compression point1 RFC–RFX 50–3000 MHz
Switching time
50% CTRL to 90% or 10% RF
Note 1: Input 0.1 dB compression point is a linearity figure of merit. Refer to Table 3 for the operating RF input power (50).
–77
–78
–111
115
68
37
1
–73.5
–72.5
2
dBc
dBc
dBm
dBm
dBm
dBm
μs
©2013-2014 Peregrine Semiconductor Corp. All rights reserved.
Page 2 of 11
Document No. DOC-12414-2 UltraCMOS® RFIC Solutions


Part Number PE423641
Description SP4T RF Switch
Maker Peregrine Semiconductor
Total Page 11 Pages
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