LAE4001R transistor equivalent, npn microwave power transistor.
* Self-aligned process entirely ion implanted and gold sandwich metallization
* Optimum temperature profile
* Excellent performance and reliability. APPLICATI.
Common emitter class A linear power amplifiers up to 4 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power tra.
NPN silicon planar epitaxial microwave power transistor in a SOT100 metal ceramic package with emitter connected to the metallized lid. A miniature ceramic encapsulation is used for compatibility with stripline microwave circuits.
2 4
handbook, halfp.
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