PPM8PN30V12 Datasheet | Prisemi

Description The MOSFET provide the best bination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ) ＜30@ VGS=-4.5V ＜18@ VGS=-10V Top View (PDFN3.3- 3.3-8L ) D D DD 8765 ID(A) -12 PPM8PN30V12 P-Channel MOSFET Internal Structure D（5、6、7、8） G（4） 1 234 S S SG S（1、2、3） Absolute maximum ratings @ TA=25℃(unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS=-10V) 300μs Pulsed Drain Current(VGS=-10V) TA=25℃ TA=70℃ TA=25℃ Continuous Drain Current(VGS=-10V) TC=25℃ TC=100℃ Diode Continuous Forward Current Avalanche Current, Single pulse (L=0.1m H) Avalanche Energy, Single pulse (L=0.1m H) Maximum Power Dissipation TA=25℃ TA=70℃ Maximum Power Dissipation TC=25℃ TC=100℃ Maximum Junction Temperature Storage Temperature Range t≤10s Thermal Resistance-Junction to Ambient Steady State Thermal Resistance-Junction to Case Steady State Symbol VDSS VGSS ID IDM ID IS IAS EAS PD PD TJ TSTG RθJA RθJC Maximum -30 ±25 -12 -8.5 -80 -33 -21 -3 -24 29 3.1 2 29 12 150 -55 to 150 40 75...