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PPM8PN30V12 - P-Channel MOSFET

General Description

The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness.

3.3-8L ) D D DD 8765 ID(A) -12 PPM8PN30V12 P-Channel MOSFET Internal Structure D（5、6、7、8） G（4） 1

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Datasheet Details

Part number PPM8PN30V12
Manufacturer Prisemi
File Size 438.03 KB
Description P-Channel MOSFET
Datasheet download datasheet PPM8PN30V12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. VDS(V) -30 MOSFET Product Summary RDS(on)(mΩ) ＜30@ VGS=-4.5V ＜18@ VGS=-10V Top View (PDFN3.3*3.3-8L ) D D DD 8765 ID(A) -12 PPM8PN30V12 P-Channel MOSFET Internal Structure D（5、6、7、8） G（4） 1 234 S S SG S（1、2、3） Absolute maximum ratings @ TA=25℃(unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(VGS=-10V) 300μs Pulsed Drain Current(VGS=-10V) TA=25℃ TA=70℃ TA=25℃ Continuous Drain Current(VGS=-10V) TC=25℃ TC=100℃ Diode Continuous Forward Current Avalanche Current, Single pulse (L=0.1mH) Avalanche Energy, Single pulse (L=0.