QPD1011 Datasheet - Qorvo

QPD1011 7W GaN RF Input-Matched Transistor

7” Short Reel * 100 Pieces 50 * 1000 MHz EVB Datasheet Rev. E, March 2024 Subject to change without notice | All rights reserved - 1 of 23 - www.qorvo.com QPD1011 30 * 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor Absolute Maximum Ratings1 Recommended Operating Co.

QPD1011 30 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1011 is a 7W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constra.

QPD1011 Features

* Frequency: 30 to 1200 MHz

* Output Power (P3dB)1: 8.7 W

* Linear Gain1: 21 dB

* Typical PAE3dB1: 60 %

* Operating Voltage: 50 V

* CW and Pulse capable Note 1: @ 1 GHz Load Pull Applications

* Military radar

* Civilian radar

QPD1011 Datasheet (1.57 MB)

QPD1011 Datasheet Preview — Preview of QPD1011 PDF

Datasheet Details

Part number:

QPD1011

Manufacturer:

Qorvo

File Size:

1.57 MB

Description:

7w gan rf input-matched transistor.

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QPD1011 GaN Input-Matched Transistor Qorvo

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