QPD1018 Key Features
- Frequency: 2.7 to 3.1 GHz
- Output Power (P3dB)1: 575 W
- Linear Gain1: 17.7 dB
- Typical PAE3dB1: 67.9%
- Operating Voltage: 50 V
- Low thermal resistance package
- Pulse capable
- Part: QPD1018
- Manufacturer: Qorvo
- Size: 1.85 MB
Related Qorvo Datasheets
| Part Number | Description |
|---|---|
| QPD1011 | 7W GaN RF Input-Matched Transistor |
| QPD1013 | GaN RF Transistor |
| QPD1019 | GaN RF IMFET |
| QPD1003 | GaN RF IMFET |
| QPD1006 | RF IMFET |
QPD1018 Description
Tray of 18 QPD1018 Pack of 2 QPD1018 2.7 3.1 GHz EVB Datasheet Rev. B, Aug 24, 2018 | Subject to change without notice - 1 of 16 - .qorvo.