3DG101
3DG101 is NPN Silicon High Frequency Low Power Transistor manufactured by Qunli Electric.
Features
: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Specifications
(Ta = 25°C )
Parameter name
Symbols Unit
3DG110
3DG111
C-B Breakdown Voltage V(BR)CBO V
C-E Breakdown Voltage V(BR)CEO V
E-Base Breakdown Voltage V(BR)EBO V
Total Dissipation
Ptot m W
Max. Collector Current ICM m A
Junction Temperature
Tjm °C
Storage Temperature
Tstg °C
20 30 40
15 20 30
≥4 (IE=0.1m A) 100 (Ta=25°C)
20 30
15 20
≥4 (IE=0.1m A) 300 (Ta=25°C)
50 175 -55~+175
F Test Condition
40 IC=0.1m A
≥4 (IE=0.1m A) 300 (Ta=25°C)
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
0.35 (IC=10m A, IB=1m...
