Datasheet Summary
N-Channel Enhancement Mode MOSFET z Features z
VDS VGS 20V 6V
RDSon TYP 127mR@4V5 170mR@2V5 242mR@1V8
ID 0.9A z z General Description
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Applications
¾ Replace Digital Transistor ¾ Battery Operated Systems ¾ Power Supply Converter Circuits
¾ Load/Power Switching Cell Phones, Pagers Pin configuration
Top View D 3
12 GS z Package Information
Package:SOT523
Unit:mm
Dim Min
Typ Max
A 0.1 0.2...