z VDS VGS 20V 6V RDSon TYP 127mR@4V5 170mR@2V5 242mR@1V8 ID 0.9A z z General Description This device is a N-Channel enhancement mode MOSFET which is produced with h.

especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications ¾ Replace Digit.

This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves .

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