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RCR

RCR1515SG Datasheet Preview

RCR1515SG Datasheet

N-Channel Enhancement Mode MOSFET

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RCR1515SG
N-Channel Enhancement Mode MOSFET
z Features
z
VDS VGS
20V 6V
RDSon TYP
127mR@4V5
170mR@2V5
242mR@1V8
ID
0.9A
z
z General Description
This device is a N-Channel enhancement mode
MOSFET which is produced with high cell density and
DMOS trench technology .This device particularly suits
low voltage applications, especially for battery powered
circuits, the tiny and thin outline saves PCB consumption.
Applications
¾ Replace Digital Transistor
¾ Battery Operated Systems
¾ Power Supply Converter Circuits
¾ Load/Power Switching Cell Phones, Pagers
Pin configuration
Top View
D
3
12
GS
z Package Information
Package:SOT523
Unit:mm
Dim Min
Typ Max
A 0.1 0.2 0.3
B
1.10
1.20
1.30
C
0.17
0.22
0.27
D
0.95
1.00
1.05
E
0.09
0.125 0.16
F 0.525 0.575 0.60
G 1.5 1.6 1.7
1/5




RCR

RCR1515SG Datasheet Preview

RCR1515SG Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

RCR1515SG
z Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±6
Drain Current (Note 1)
Continuous
Pulsed
ID
0.9
1.3
Power Dissipation Derating above TA = 25°C (Note 1)
Pd
300
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
Note1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inches. The rating is for each chip in the package.
Unit
V
A
mW
°C
z Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter (Note 2)
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V(BR)DSS
VGS = 0 V, ID = 250ȝA
IDSS VDS = 16V, VGS = 0V
IGSS VGS = ±6V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(TH)
VDS = VGS, ID = 250uA
ID = 600mA,VGS = 4.5V
RDS (ON)
ID = 500mA,VGS = 2.5V
ID = 350mA,VGS = 1.8V
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
td(on)
VDD = -6V, RL = 6R, ǿD = í1ǹ,
td(off)
VGEN = -4.5V, RG = 6R
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -16V, VGS = 0V,
f = 200KHz
BODY DIODE CHARACTERISTICS
Diode Forward Voltage(1)
VSD VGS = 0 V, IS = 150mA
Note 2. Short duration test pulse used to minimize self-heating effect.
Min Typ Max Unit
20 26 --
-- -- 1
-- -- ±100
V
uA
nA
0.45 -- 1
-- 127 230
-- 170 275
-- 242 700
V
mR
-- 3.7 --
-- 25 --
ns
-- 130 --
-- 20 --
-- 16 --
pF
-- 0.68 1.2
V
2/5


Part Number RCR1515SG
Description N-Channel Enhancement Mode MOSFET
Maker RCR
Total Page 5 Pages
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