Full PDF Text Transcription for R6509ENJ (Reference)
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R6509ENJ. For precise diagrams, and layout, please refer to the original PDF.
R6509ENJ Nch 650V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.585Ω ±9A 94W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free p...
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esistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline LPT(S) lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6509ENJ Basic ordering unit (pcs) 1000 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current (Tc = 25°C) Pulsed drain current VDSS ID*1 IDP*2 650 V ±9 A ±27 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse IAS 1.
R6509ENJ Datasheet
