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Rohm Semiconductor Electronic Components Datasheet

SCS105KG Datasheet

SiC Schottky Barrier Diode

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SCS105KG
SiC Schottky Barrier Diode
VR 1200V
IF 5A
QC 20nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer type
lOutline
TO-220AC
Datasheet
(1)
lInner circuit
(2) (3)
(1)
(1) Cathode
(2) Cathode
(3) Anode
(2) (3)
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
50
-
SCS105KG
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power dissipation
Junction temperature
VRM 1200
VR 1200
IF 5*1
IFSM
21*2
97*3
IFRM
24*4
PD 83*5
Tj 175
Range of storage temperature
Tstg
-55 to +175
Thermal resistance, junction to case
Rth(j-c)
1.8
*1 Tc=148°C *2 PW=8.3ms sinusoidal,Tj=25°C
*3 PW=10ms square,Tj=25°C *4 Tc=100°C,Tj=150°C,Duty cycle=10% *5 Tc=25°C
Unit
V
V
A
A
A
A
W
°C
°C
°C/W
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/5
2012.09 - Rev.A


Rohm Semiconductor Electronic Components Datasheet

SCS105KG Datasheet

SiC Schottky Barrier Diode

No Preview Available !

SCS105KG
Data Sheet
lElectrical characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
DC blocking voltage
VDC IR =0.1mA
1200
-
-
Forward voltage
IF=5A,Tj=25°C
VF
IF=5A,Tj=175°C
- 1.5 1.75
- 2.0 -
Reverse current
VR=1200V,Tj=25°C
IR
VR=1200V,Tj=175°C
-
-
5 100
60 -
Total capacitance
VR=1V,f=1MHz
C
VR=800V,f=1MHz
- 325 -
- 25 -
Total capacitive charge
Qc VR=800V,di/dt=500A/ms - 20 -
Switching time
tc VR=800V,di/dt=500A/ms - 15 -
Unit
V
V
V
mA
mA
pF
pF
nC
ns
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2/5
2012.09 - Rev.A


Part Number SCS105KG
Description SiC Schottky Barrier Diode
Maker ROHM
Total Page 6 Pages
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