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DH100P30 - 30A 100V P-channel Enhancement Mode Power MOSFET

General Description

These P-channel Enhanced VDMOSFETs, Used advanced trench technology and design, provide to excellent RDSON with low gate charge.

Which accords with the RoHS standard.

Key Features

  • Fast Switching.
  • Low ON Resistance.
  • Low Gate Charge.
  • Low Reverse Transfer Capacitances.
  • 100% Single Pulse Avalanche Energy Test.
  • 100% ΔVDS Test 3.

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Datasheet Details

Part number DH100P30
Manufacturer ROUM
File Size 1.17 MB
Description 30A 100V P-channel Enhancement Mode Power MOSFET
Datasheet download datasheet DH100P30 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DH100P30/DH100P30F/DH100P30I/ DH100P30E/DH100P30B/DH100P30D 30A 100V P-channel Enhancement Mode Power MOSFET 1 Description These P-channel Enhanced VDMOSFETs, Used advanced trench technology and design, provide to excellent RDSON with low gate charge. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance ● Low Gate Charge ● Low Reverse Transfer Capacitances ● 100% Single Pulse Avalanche Energy Test ● 100% ΔVDS Test 3 Applications ● Suitable for Motor Drivers. ● Switching Regulators ● Converters and Relay Drivers ● Alertor VDSS = -100V RDS(on) (TYP)=35mΩ ID = -30A TO-220C TO-220F TO-262 TO-263 TO-252B TO-251B 4 Electrical Characteristics 4.