* Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
* High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC3356 2SC3356-T1B Order Number 2SC3356-A 2SC3356-T1B-A Package Quantit
2SC3356
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Npn silicon rf transistor.
PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Ampl.
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