2SC3356 - NPN Silicon RF Transistor

Renesas

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Datasheet Details

Part number	2SC3356
Manufacturer	Renesas
File Size	176.69 KB
Description	NPN Silicon RF Transistor
Datasheet	2SC3356-Renesas.pdf

2SC3356 Product details

Description

Summary Previous No.:PU10209EJ02V0DS Modification of ORDERING INFORMATION Modification of hFE CLASSIFICATION All trademarks and registered trademarks are the property of their respective owners.C-1 Notice 1. All information included in this document is current as of the date this document is issued.Such information, however, is subject to change without any prior notice.Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information

Features

Low noise and high gain : NF = 1.1 dB TYP. , Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz.
High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz.

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Published: Apr 2, 2016 |