DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356.
NEC
C3356 - 2SC3356
DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN s.
AiT Semiconductor
2SC3356L - NPN TRANSISTOR
AiT Semiconductor Inc. www.ait-ic.com 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR DESCRIPTION The 2SC3356L is available in SOT-23 .
UTC
2SC3356L - NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 3 DESCRIPTION The UTC 2SC3356 is designed .
NEC
2SC3356 - NPN Silicon Transistor
DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN s.
BLUE ROCKET ELECTRONICS
2SC3356W - Silicon NPN transistor
2SC3356W Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package. / Features 。 Low noise .
Globaltech
GST2SC3356 - High-Frequency Amplifier Transistor NPN Silicon
GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon Product Description This device is designed as a general purpose amplifier and switch. Pac.
UTC
2SC3356 - NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 3 DESCRIPTION The UTC 2SC3356 is an NPN sil.
Leshan Radio Company
L2SC3356LT1G - High-Frequency Amplifier Transistor
DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF.
SeCoS Halbleitertechnologie GmbH
2SC3356F - NPN Transistor
www.DataSheet4U.com 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifie.
Galaxy Semi-Conductor Holdings Limited
2SC3356W - Silicon NPN Transistor
www.DataSheet4U.com BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,.
Kexin
2SC3356 - NPN Transistor
SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga.
Inchange Semiconductor
2SC3356 - Silicon NPN Transistor
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC .
SeCoS
2SC3356 - NPN Transistor
Elektronische Bauelemente 2SC3356 NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead fre.
Leshan Radio Company
L2SC3356WT3G - High-Frequency Amplifier Transistor
DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF .
Renesas
2SC3356 - NPN Silicon RF Transistor
PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Ampl.
Leshan Radio Company
L2SC3356LT1 - High-Frequency Amplifier Transistor
DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1 3 DESCRIPTION www.DataSheet4U.com 1 2 The L2SC3356LT1 is an NPN silicon epitaxial transistor des.
Leshan Radio Company
L2SC3356WT1G - High-Frequency Amplifier Transistor
DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF .