2SC3356 Datasheet | Specifications & PDF Download

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC3356 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC

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UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 3  DESCRIPTION The UTC 2SC3356 is an NPN sil

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DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN s

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DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN s

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AiT Semiconductor Inc. www.ait-ic.com 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR DESCRIPTION The 2SC3356L is available in SOT-23

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2SC3356W Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package.  / Features 。 Low noise

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PreliminaryData Sheet 2SC3356 R09DS0021EJ0300 NPN Silicon RF Transistor Rev.3.00 NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Ampl

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SMD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga

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GST2SC3356 High-Frequency Amplifier Transistor NPN Silicon Product Description This device is designed as a general purpose amplifier and switch. Pac

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DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF

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Elektronische Bauelemente 2SC3356 NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead fre

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www.DataSheet4U.com 2SC3356F NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifie

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www.DataSheet4U.com BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,

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DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF

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UNISONIC TECHNOLOGIES CO., LTD 2SC3356 NPN SILICON TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER 3 3  DESCRIPTION The UTC 2SC3356 is designed

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DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION The L2SC3356WT1is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF

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DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1 3 DESCRIPTION www.DataSheet4U.com 1 2 The L2SC3356LT1 is an NPN silicon epitaxial transistor des

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