2SC5338 transistor equivalent, npn silicon rf transistor.
* High gain: S21e = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz
2
* Low distortion, low voltage: IM2 = −55 dB TYP., IM3 = −76 dB TYP. @ VCE = 5 V, IC = 50 mA.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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