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H5N6001P - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance.
  • Low leakage current.
  • High speed switching.
  • Low gate charge (Qg) Outline.

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Datasheet Details

Part number H5N6001P
Manufacturer Renesas
File Size 75.92 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet H5N6001P Datasheet

Full PDF Text Transcription for H5N6001P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for H5N6001P. For precise diagrams, and layout, please refer to the original PDF.

H5N6001P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) Outline REN...

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kage current • High speed switching • Low gate charge (Qg) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1118-0300 (Previous: ADE-208-1425A) Rev.3.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.3.00 Sep 07, 2005 page 1 of 6 H5N6001P Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value

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