HAF2017L, HAF2017 - Silicon N-Channel Power MOS FET

Renesas

Datasheet Details

Part number	HAF2017L, HAF2017
Manufacturer	Renesas
File Size	121.57 KB
Description	Silicon N-Channel Power MOS FET
Datasheet	HAF2017-Renesas.pdf
Note	This datasheet PDF includes multiple part numbers: HAF2017L, HAF2017. Please refer to the document for exact specifications by model.

This FET has the over temperature shutdown capability sensing the junction temperature.

Logic level operation (4 to 6 V Gate drive).
High endurance capability against to the short circuit.
Built-in the over temperature shutdown circuit.
Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S LDPAK(L) 4 LDPAK(S)-1 4 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00, Apr.13.2004, page 1 of 8 HAF2017(L), HAF2017(S) Absolute Maximum Ratin.

📁 HAF2017L Similar Datasheet

HAF2011 - Silicon N Channel MOS FET Series Power Switching (Hitachi Semiconductor)
HAF2011L - Silicon N Channel MOS FET Series Power Switching (Hitachi Semiconductor)
HAF2011S - Silicon N Channel MOS FET Series Power Switching (Hitachi Semiconductor)
HAF2012 - Silicon N Channel MOS FET Series Power Switching (Renesas Technology)
HAF2012L - Silicon N Channel MOS FET Series Power Switching (Renesas Technology)
HAF2012S - Silicon N Channel MOS FET Series Power Switching (Renesas Technology)
HAF2015RJ - N-Channel MOSFET (Hitachi Semiconductor)
HAF2001 - Silicon N Channel MOS FET Series Power Switching (Hitachi Semiconductor)

Other Datasheets by Renesas

Published: May 1, 2016 |