HAF2017L Key Features
- Logic level operation (4 to 6 V Gate drive)
- High endurance capability against to the short circuit
- Built-in the over temperature shutdown circuit
- Latch type shutdown operation (Need 0 voltage recovery)
- Part: HAF2017L
- Manufacturer: Renesas (official site)
- Size: 121.57 KB
Related Renesas (official site) Datasheets
| Part Number | Description |
|---|---|
| HAF2017 | Silicon N-Channel Power MOS FET |
| HAF2017S | Silicon N-Channel Power MOS FET |
| HAF2015RJ | N-Channel MOSFET |
| HAF2021L | Silicon N-Channel MOSFET |
| HAF2021S | Silicon N-Channel MOSFET |
HAF2017L Description
HAF2017(L), HAF2017(S) Silicon N Channel Power MOS FET Power Switching REJ03G0234-0200Z (Previous ADE-208-1637 (Z)) Rev.2.00 Apr.13.2004 Descriptions This FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like...