Datasheet Details
| Part number | HAF2017S |
|---|---|
| Manufacturer | Renesas |
| File Size | 121.57 KB |
| Description | Silicon N-Channel Power MOS FET |
| Datasheet |
 HAF2017S Datasheet
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General Description
This FET has the over temperature shutdown capability sensing the junction temperature.
This FET has the built-in over temperature shutdown circuit in the gate area.
Key Features
- Logic level operation (4 to 6 V Gate drive).
- High endurance capability against to the short circuit.
- Built-in the over temperature shutdown circuit.
- Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shutdown Circuit S LDPAK(L) 4 LDPAK(S)-1 4 1 2 3 1 2 3 1. Gate 2. Drain 3. Source 4. Drain Rev.2.00, Apr.13.2004, page 1 of 8 HAF2017(L), HAF2017(S) Absolute Maximum Ratin.