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N0603N - N-CHANNEL MOSFET

Description

The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A).
  • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V).
  • High current ID(DC) = ±100 A.
  • RoHS Compliant Ordering Information Part No. N0603N-S23-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Package TO-262 1.8 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode. ) Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Dr.

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Datasheet Details

Part number N0603N
Manufacturer Renesas
File Size 232.04 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet N0603N Datasheet
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Preliminary Data Sheet N0603N N-CHANNEL MOSFET FOR SWITCHING Description R07DS0559EJ0100 Rev.1.00 Nov 07, 2011 The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No. N0603N-S23-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Package TO-262 1.8 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.
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