N0603N - N-CHANNEL MOSFET

Renesas

Datasheet Details

R07DS0559EJ0100 Rev.1.00 Nov 07, 2011 The N0603N is N-channel MOS Field Effect Transistor designed for high current switching applications..

Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A).
Low input capacitance Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V).
High current ID(DC) = ±100 A.
RoHS Compliant Ordering Information Part No. N0603N-S23-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube Package TO-262 1.8 g TYP. Note: ∗1. Pb-free (This product does not contain Pb in the external electrode. ) Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Dr.

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