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Renesas Electronics Components Datasheet

NE5550234 Datasheet

Silicon Power MOSFET

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NE5550234
Silicon Power MOS FET
Data Sheet
R09DS0039EJ0300
Rev.3.00
Mar 12, 2013
FEATURES
High Output Power
: Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
High Linear gain
: GL = 23.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm)
High ESD tolerance
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
150 MHz Band Radio System
460 MHz Band Radio System
900 MHz Band Radio System
ORDERING INFORMATION
Part Number
Order Number
Package Marking
Supplying Form
NE5550234
NE5550234-T1
NE5550234-AZ
NE5550234-T1-AZ
3-pin
power
minimold
(34 PKG)
(Pb-Free)
V5 12 mm wide embossed taping
Gate pin faces the perforation side of the tape
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550234
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
(50% Duty Pulsed)
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note: Value at TC = 25°C
Symbol
VDS
VGS
IDS
IDS-pulse
Ptot
Tch
Tstg
Ratings
30
6.0
0.6
1.2
12.5
150
65 to +150
Unit
V
V
A
A
W
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0039EJ0300 Rev.3.00
Mar 12, 2013
Page 1 of 14
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Renesas Electronics Components Datasheet

NE5550234 Datasheet

Silicon Power MOSFET

No Preview Available !

NE5550234
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
VDS
VGS
IDS
Pin
Test Conditions
f = 460 MHz, VDS = 7.5 V
MIN.
1.65
TYP.
7.5
2.20
0.38
15
MAX.
9.0
2.85
20
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN. TYP. MAX.
DC Characteristics
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
IGSS VGS = 6.0 V
IDSS
VDS = 25 V
− − 100
− − 10
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
Thermal Resistance
RF Characteristics
Vth
BVDSS
Gm
Rth
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 μA
VDS = 7.5 V, IDS = 140±20 mA
Channel to Case
1.15 1.65 2.25
25 38
0.44
10.0
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Load VSWR Tolerance
Pout
IDS
ηd
ηadd
GL Note 1
Note 2
f = 460 MHz, VDS = 7.5 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
f = 460 MHz, VDS = 9.0 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
Load VSWR=20:1(All Phase)
31.5 33.0
0.38
70
68
23.5
No Destroy
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Pout
IDS
ηd
ηadd
GL Note 3
Pout
IDS
ηd
ηadd
GL Note 4
f = 157 MHz, VDS = 7.5 V,
Pin = 15 dBm,
IDset = 40 mA (RF OFF)
f = 900 MHz, VDS = 7.5 V,
Pin = 17 dBm,
IDset = 40 mA (RF OFF)
33.0
0.36
74
73
25.8
32.2
0.35
62
60
18.3
Notes: 1. Pin = 0 dBm
2. These characteristics values are measurement using measurement tools especially by RENESAS.
3. Pin = 5 dBm
4. Pin = 7 dBm
Unit
nA
μA
V
V
S
°C/W
dBm
A
%
%
dB
dBm
A
%
%
dB
dBm
A
%
%
dB
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
The wafer rejection criterion for standard devices is 1 reject for several samples.
R09DS0039EJ0300 Rev.3.00
Mar 12, 2013
Page 2 of 14
Free Datasheet http://www.datasheet4u.com/


Part Number NE5550234
Description Silicon Power MOSFET
Maker Renesas
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