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NE5550779A Silicon Power LDMOS FET

NE5550779A Description

Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 .

NE5550779A Features

* High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
* High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
* High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 m

NE5550779A Applications

* 150 MHz Band Radio System
* 460 MHz Band Radio System
* 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550779A Order Number NE5550779A-A Package 79A (Pb-Free) Marking W8 Supplying Form
* 12 mm wide embossed taping
* Gate pin faces the pe

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