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NE5550779A - Silicon Power LDMOS FET

Features

  • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm).
  • High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm).
  • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm).
  • High ESD tolerance.
  • Suitable for VHF to UHF-BAND Class-AB power amplifier.

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Datasheet preview – NE5550779A

Datasheet Details

Part number NE5550779A
Manufacturer Renesas
File Size 3.15 MB
Description Silicon Power LDMOS FET
Datasheet download datasheet NE5550779A Datasheet
Additional preview pages of the NE5550779A datasheet.

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Full PDF Text Transcription

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Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 FEATURES • High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) • High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) • High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm) • High ESD tolerance • Suitable for VHF to UHF-BAND Class-AB power amplifier.
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