NE5550779A Description
Data Sheet NE5550779A Silicon Power LDMOS FET R09DS0040EJ0300 Rev.3.00 Mar 12, 2013.
NE5550779A Key Features
- High Output Power
- High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
- High Linear gain
- High ESD tolerance
- Suitable for VHF to UHF-BAND Class-AB power amplifier