NE5550779A Datasheet - Renesas

Silicon Power LDMOS FET

* High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)

* High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)

* High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 m

NE5550779A

3.15 MB

Silicon power ldmos fet.

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NE5550779A Silicon Power LDMOS FET Renesas

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