NE5550779A fet equivalent, silicon power ldmos fet.
* High Output Power
: Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
* High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 .
* 150 MHz Band Radio System
* 460 MHz Band Radio System
* 900 MHz Band Radio System
ORDERING INFORMATION
P.
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