NE5550779A - Silicon Power LDMOS FET

Product Overview

Renesas

Part number	NE5550779A
Manufacturer	Renesas
File Size	3.15 MB
Description	Silicon Power LDMOS FET
Datasheet	NE5550779A Datasheet
Additional preview pages of the NE5550779A datasheet.

High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm).
High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm).
High Linear gain : GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm).
High ESD tolerance.
Suitable for VHF to UHF-BAND Class-AB power amplifier.

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Published: Nov 10, 2013 |