NP50P06SDG Datasheet, MOSFET, Renesas

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NP50P06SDG Features and benefits

* Super low on-state resistance : RDS(on) = 16.5 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23.0 m Max. ( VGS = -4.5 V, ID = -25 A )
* Low input capacitance :.

NP50P06SDG Application

Features
* Super low on-state resistance : RDS(on) = 16.5 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23.0 m Max.

NP50P06SDG Description

This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Super low on-state resistance : RDS(on) = 16.5 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23.0 m Max. ( VGS = -4.5 V, ID = -25 .

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