NP50P03YDG datasheet, transistor equivalent, Renesas

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NP50P03YDG Features and benefits

* Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
* Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V)
* Designed for automotive.

NP50P03YDG Application

Features
* Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
* Low Ciss: Ciss = 2300 pF.

NP50P03YDG Description

The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features
* Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
* Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS =.

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