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NP80N04NLG - N-CHANNEL POWER MOS FET

Download the NP80N04NLG datasheet PDF (NP80N04MLG included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel power mos fet.

Description

The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Logic level.
  • Built-in gate protection diode.
  • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N04PLG RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A).
  • High current rating ID(DC) = ±80 A.
  • Low input capacitance Ciss = 4600 pF TYP.
  • Designed for automotive.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP80N04MLG-Renesas.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NP80N04NLG
Manufacturer Renesas
File Size 281.58 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP80N04NLG Datasheet

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04MLG, NP80N04NLG, NP80N04PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N04MLG, NP80N04NLG, and NP80N04PLG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP80N04MLG-S18-AY Note NP80N04NLG-S18-AY Note NP80N04PLG-E1B-AY Note NP80N04PLG-E2B-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tube 50 p/tube Tape 1000 p/reel Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE TO-220 (MP-25K) typ. 1.9 g TO-262 (MP-25SK) typ. 1.8 g TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N04MLG, NP80N04NLG RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.
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