NP80N06CLD - N-CHANNEL POWER MOS FET

Product Overview

Renesas

Part number	NP80N06CLD
Manufacturer	Renesas
File Size	83.70 KB
Description	N-CHANNEL POWER MOS FET
Datasheet	NP80N06CLD Datasheet
Additional preview pages of the NP80N06CLD datasheet.

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Channel Temperature 175 degree rated.
Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX. ) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX. ) (VGS = 5 V, ID = 40 A).
Low Ciss : Ciss = 2360 pF (TYP. ).
Built-in Gate protection diode.

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Published: Mar 28, 2016 |