PS2561L-1 GaAs light emitting diode and an NPN silicon phototransistor
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High collector to emitter voltage (VCEO = 80 V)
• High current transfer ratio (CTR = 200% TYP.)
• High-spe.
• Power supply
• Telephone/FAX.
• FA/OA equipment
• Programmable logic controllers
R08DS0207EJ0100 Rev..
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