Description
The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
Features
- Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ).
- Clock z z z
z
Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems Clock-stop capability with μs restart.
- I/O z z z z z z
Common data input/output bus Pipelined double data rate operation HSTL I/O User programmable output impedance PLL circuitry for wide o.
R1QLA4436RBG-Renesas.pdf
