Part R1QLA4436RBG
Description 144-Mbit DDRII+ SRAM 2-word Burst Architecture
Manufacturer Renesas
Size 947.74 KB
Renesas

R1QLA4436RBG Overview

Key Specifications

Pins: 165
Operating Voltage: 1.8 V
Max Voltage (typical range): 1.9 V
Min Voltage (typical range): 1.7 V

Description

The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter.

Key Features

  • Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ)
  • I/O z z z z z
  • Two-tick burst for low DDR transaction size
  • Internally self-timed write control
  • Simple control logic for easy depth expansion

Price & Availability

Seller Inventory Price Breaks Buy
No distributor offers were returned for this part.