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R1RW0408DGE-2PI Datasheet 4M High Speed SRAM

Manufacturer: Renesas

Download the R1RW0408DGE-2PI datasheet PDF. This datasheet also includes the R1RW0408DI variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (R1RW0408DI-Renesas.pdf) that lists specifications for multiple related part numbers.

General Description

The R1RW0408DI is a 4-Mbit high speed static RAM organized 512-kword × 8-bit.

It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology.

It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system.

Overview

R1RW0408DI Series Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit) Datasheet R10DS0287EJ0100 Rev.1.00 Nov.18.

Key Features

  • Single 3.3V supply: 3.3V ± 0.3V.
  • Access time: 12ns (max).
  • Completely static memory ⎯ No clock or timing strobe required.
  • Equal access and cycle times.
  • Directly TTL compatible ⎯ All inputs and outputs.
  • Operating current: 100mA (max).
  • TTL standby current: 40mA (max).
  • CMOS standby current : 5mA (max).
  • Temperature range:.
  • 40 to +85°C Ordering Information Type No. R1RW0408DGE-2PI Access time 12ns Package 400-m.

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