RBN100N180S2HFWA Datasheet, IGBT, Renesas

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RBN100N180S2HFWA Features and benefits

* Renesas generation 8th Trench IGBT
* Short circuit withstands time (10 s min.)
* Optimized for high power application
* Unsawn wafer Wafer size = 200 m.

RBN100N180S2HFWA Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation or any other use of the circuits,.

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