* Renesas generation 8th Trench IGBT
* Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 40 A, VGE = 15 V, Ta = 25 C)
* High speed s.

UPS, Welding, photovoltaic inverters, Power converter system
* Unsawn wafer Wafer size: 200 mm
* Quality grade:.

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporat.

RBN40N125S1UFWA

RBN40H125S1FPQ-A0

RBN40H65T1FPQ-A0

RBN150N180S2HFWA

RBN200N180S2HFWA

RBN25H125S1FPQ-A0

RBN25N125S1UFWA

RBN50H65T1FPQ-A0

RBN75H125S1FP4-A0

RBN75H65T1FPQ-A0

RBN75N125S1UFWA

RBN75N65T1UFWA

RB-150