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RJH30H1DPP-M0 Datasheet, Renesas

RJH30H1DPP-M0 switching equivalent, high speed power switching.

RJH30H1DPP-M0 Avg. rating / M : 1.0 rating-16

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RJH30H1DPP-M0 Datasheet

Features and benefits


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* Trench gate and thin wafer technology (G6H-II series) High speed switching: tr =80 ns typ., tf = 150 ns typ. Low collector to emitter .

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

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