logo

RJH30H2DPK-M0 Datasheet, Renesas

RJH30H2DPK-M0 switching equivalent, high speed power switching.

RJH30H2DPK-M0 Avg. rating / M : 1.0 rating-13

datasheet Download

RJH30H2DPK-M0 Datasheet

Features and benefits


*
*
*
*
* Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching.

Application

or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.

Image gallery

RJH30H2DPK-M0 Page 1 RJH30H2DPK-M0 Page 2 RJH30H2DPK-M0 Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts