RJK60S3DPE - High Speed Power Switching SJ MOS FET

Product Overview

Renesas

Datasheet Details

Part number	RJK60S3DPE
Manufacturer	Renesas
File Size	188.68 KB
Description	High Speed Power Switching SJ MOS FET
Datasheet	RJK60S3DPE Datasheet
Additional preview pages of the RJK60S3DPE datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Superjunction MOSFET.
Low on-resistance RDS(on) = 0.35  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C).
High speed switching tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 , Rg = 10 , Ta = 25C) Outline.

📁 Similar Datasheet

RJK6002DPD - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
RJK6006DPD - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
RJK6009DPP - Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
RJK6013DPE - Silicon N-Channel MOSFET (Renesas Technology)
RJK6014DPK - Silicon N-Channel MOSFET (Renesas Technology)
RJK6014DPP - Silicon N-Channel MOSFET (Renesas Technology)
RJK6015DPK - Silicon N-Channel MOSFET (Renesas Technology)
RJK6018DPK - Silicon N-Channel MOSFET (Renesas Technology)

Other Datasheets by Renesas

RJK60S3DPD - High Speed Power Switching MOSFET
RJK60S3DPP-E0 - 600V - 12A - SJ MOS FET High Speed Power Switching
RJK60S4DPE - High Speed Power Switching SJ MOS FET
RJK60S5DPN - High Speed Power Switching MOSFET
RJK60S5DPQ-E0 - High Speed Power Switching MOSFET
RJK60S7DPK-M0 - High Speed Power Switching MOS FET

Published: Nov 14, 2015 |