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Renesas Electronics Components Datasheet

RJK60S3DPE Datasheet

High Speed Power Switching SJ MOS FET

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Preliminary Datasheet
RJK60S3DPE
600V - 12A - SJ MOS FET
High Speed Power Switching
R07DS0732EJ0200
Rev.2.00
Oct 12, 2012
Features
Superjunction MOSFET
Low on-resistance
RDS(on) = 0.35 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
High speed switching
tf = 21 ns typ. (at ID = 6 A, VGS = 10 V, RL = 50 , Rg = 10 , Ta = 25C)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
D
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. Maximum duty cycle D = 0.75.
3. STch = 25C, Tch 150C
4. Value at Tc = 25C
Symbol
VDSS
VGSS
ID Note1,2
ID Note1,2
ID
Note1
(pulse)
IDR Note1
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note4
ch-c
Tch
Tstg
Ratings
600
+30, 20
12.0
7.6
24
12
24
3
0.49
83.3
1.5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0732EJ0200 Rev.2.00
Oct 12, 2012
Page 1 of 7


Renesas Electronics Components Datasheet

RJK60S3DPE Datasheet

High Speed Power Switching SJ MOS FET

No Preview Available !

RJK60S3DPE
Electrical Characteristics
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
RDS(on)
Min
600
3
Gate resistance
Rg —
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery
current
Body-drain diode reverse recovery
charge
Notes: 5. Pulse test
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Irr
Qrr
Typ
0.35
0.87
2.5
720
980
3.7
13
18
25
18
13.6
4.8
3.9
1.0
320
20
3.7
Preliminary
Max
1
±0.1
5
0.44
1.6
Unit
V
mA
A
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
A
C
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = +30V, 20 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 6 A, VGS = 10 V Note5
Ta = 150°C
ID = 6 A, VGS = 10 V Note5
f = 1 MHz
VDS = 25 V, VGS = 0
VDS = 25 V
VGS = 0
f = 100 kHz
ID = 6 A
VGS = 10 V
RL = 50
Rg = 10 Note5
VDD = 480 V
VGS = 10 V
ID = 12 A Note5
IF = 12 A, VGS = 0 Note5
IF = 12 A
VGS = 0
diF/dt = 100 A/s Note5
R07DS0732EJ0200 Rev.2.00
Oct 12, 2012
Page 2 of 7


Part Number RJK60S3DPE
Description High Speed Power Switching SJ MOS FET
Maker Renesas
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