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RJL5012DPP-M0 - Silicon N Channel MOS FET

General Description

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Key Features

  • Built-in fast recovery diode.
  • Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C).
  • Low leakage current.
  • High speed switching Outline.

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RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 23 G Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current VGSS IDNote4 ID Note1 (pulse) Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1.