RJL5012DPP-M0 fet equivalent, silicon n channel mos fet.
* Built-in fast recovery diode
* Low on-resistance
RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C)
* Low leakage current
* High speed switching.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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