RJL5014DPK
Features
- -
- - Built-in fast recovery diode Low on-resistance Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P)
1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 500 ±30 19 57 19 57 4 0.88 150 0.833 150
- 55 to +150 Unit V V A A A A A m J W °C/W °C °C
REJ03G1798-0100 Rev.1.00 Jun 30, 2009 Page 1 of 3
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Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Zero gate...
