RJP60F0DPE
RJP60F0DPE is N-Channel IGBT manufactured by Renesas.
Preliminary Datasheet
600 V
- 25 A
- IGBT High Speed Power Switching
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25°C)
- Trench gate and thin wafer technology
- High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0540EJ0100 Rev.1.00 Sep 09, 2011
Outline
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
C 4
G 1 2 3 E
1. Gate 2. Collector 3. Emitter 4. Collector
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