RJP60F0DPM
RJP60F0DPM is N-Channel IGBT manufactured by Renesas.
Preliminary Datasheet
600 V
- 25 A
- IGBT High Speed Power Switching
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25°C)
- Trench gate and thin wafer technology
- High speed switching R07DS0585EJ0100 Rev.1.00 Nov 25, 2011
Outline
RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM)
1. Gate 2. Collector 3. Emitter
E 1 2
.DataSheet.co.kr...
