Datasheet Summary
Preliminary Datasheet
600V
- 50A
- IGBT High Speed Power Switching
R07DS1001EJ0100 Rev.1.00
Jan 22, 2013
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
- Trench gate and thin wafer technology
- High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
12 3
1. Gate
2. Collector
3. Emitter
4....