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Renesas Electronics Components Datasheet

RJP60F7DPK Datasheet

IGBT

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Preliminary Datasheet
RJP60F7DPK
600V - 50A - IGBT
High Speed Power Switching
R07DS1001EJ0100
Rev.1.00
Jan 22, 2013
Features
Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Trench gate and thin wafer technology
High speed switching
tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
12 3
1. Gate
G
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
VCES
VGES
IC
IC
ic(peak) Note1
PC
j-c
Tj
Tstg
Ratings
600
±30
90
50
180
328.9
0.38
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
W
°C/W
°C
°C
R07DS1001EJ0100 Rev.1.00
Jan 22, 2013
Page 1 of 6


Renesas Electronics Components Datasheet

RJP60F7DPK Datasheet

IGBT

No Preview Available !

RJP60F7DPK
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
ICES
Gate to emitter leak current
IGES
Gate to emitter cutoff voltage
VGE(off)
4
Collector to emitter saturation voltage VCE(sat)
VCE(sat)
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Switching time
td(on)
tr
td(off)
tf
Notes: 2. Pulse test
Typ
1.35
1.6
4700
198
83
63
81
142
74
Preliminary
Max
100
±1
8
1.75
Unit
A
A
V
V
V
pF
pF
pF
ns
ns
ns
ns
(Tj = 25°C)
Test Conditions
VCE = 600V, VGE = 0
VGE = ±30 V, VCE = 0
VCE = 10V, IC = 1 mA
IC = 50 A, VGE = 15V Note2
IC = 90 A, VGE = 15V Note2
VCE = 25 V
VGE = 0 V
f = 1 MHz
IC = 30 A,
VCE = 400 V, VGE = 15 V
Rg = 5 Note2
Inductive load
R07DS1001EJ0100 Rev.1.00
Jan 22, 2013
Page 2 of 6



Part Number RJP60F7DPK
Description IGBT
Maker Renesas
Total Page 3 Pages
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