Datasheet4U Logo Datasheet4U.com

RQJ0304DQDQS - Silicon P-Channel MOS FET

Key Features

  • Low gate drive VDSS :.
  • 30 V and 2.5 V gate drive.
  • Low drive current.
  • High speed switching.
  • Small traditional Power package (UPAK) Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RQJ0202VGDQATL-E P-Channel 20V MOSFET VBsemi

Other Datasheets by Renesas

Part Number Description
RQJ0304DQDQA Silicon P-Channel MOS FET
RQJ0301HGDQS Silicon P-Channel MOS FET
RQJ0302NGDQA Silicon P-Channel MOS FET
RQJ0303PGDQA Silicon P Channel MOS FET
RQJ0305EQDQA Silicon P-Channel MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RQJ0304DQDQS Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional Power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Notes: Marking is "DQ". Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Thermal resistance VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Rth(ch-a) Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) REJ03G1778-0100 Rev.1.00 Mar 16, 2009 2, 4 D 1. Gate 2. Drain 3. Source 4.